Associate Professor

Assistant Professor


Graduate students



Shuangying Lei







  • Associated  Professor, born in Dianjiang, Chongqing
  • 1996.9-2003.7: Bachelor and Master in School of Physics, Northeast Normal University,    Changchun, P. R. China.
  • 2003.9-2006.7: Ph.D,  School of Physics, Peking University, Beijing, P. R. China.
  • 2006.9- present: Teacher in School of Electronic Science and Engineering, Southeast University, Nanjing, P. R. China.
Research interests:
  • NEMS
  • Graphene
Selected Publications:

1. Lei, S. Y.  Shen, B.  Cao, L.  Xu, F. J.  Yang, Z. J.  Xu, K.  Zhang, G. Y.“Influence of polarization-induced electric field on the wavelength and the absorption coefficient of the ISBTs in AlxGa1-xN/GaN DQWs�?J. Appl. Phys. 99, 074501 (2006) DOI: 10.1063/1.2186381 ;

2. Lei, S. Y.  Shen, B.  Cao, L.  Yang, Z. J.  Zhang, G. Y.“ISBTs in asymmetric AlxGa1-xN/GaN DQWs”J. Appl. Phys. 101, 123108 (2007) DOI: 10.1063/1.2745422 ;

3. S Y Lei, Z G Dong, B Shen and G Y Zhang“Three-energy-level system in asymmetric AlxGa1-xN/GaN DQWs”J. Phys. D 41, 065101 (2008)  DOI:10.1088/0022-3727/41/6/065101;

4. S.Y. Lei, Z.G. Dong, B. Shen and G.Y. Zhang“ISBT in symmetric AlxGa1-xN/GaN DQWs with AEF�?em>Phys. Lett. A 373, 100 (2008) DOI:10.1016/j.physleta.2008.10.091.
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