by Pro.Hoe Tan
The Australian National University
2016年7月8日（星期五）下午2:00
榴园宾馆 多功能报告厅
Abstract
In this talk, I will present an overview of compound semiconductor nanowire
research activities at The Australian National University. The optical and
structural properties of binary and ternary III-V nanowires including GaAs,
InGaAs, InP and GaAsSb nanowires grown by metal-organic vapour phase
epitaxy will be presented. Various issues such as tapering of the nanowires,
compositional non-uniformity along nanowires, crystal structure, carrier
lifetime and polarization effect will be discussed. I will also present our results
of III-V nanowires grown on Si substrate which are of great interests for the
integration of nano-optoelectronic devices on Si platforms. Our results of
enhancing the quantum efficiency of nanowires by using plasmonics are
promising to improve the performance of nanowire devices. Finally, the results
from our nanowire lasers, solar cells and photodetectors will be presented.
Personal profile：
Prof. Tan is currently the Head of the Department of Electronic Materials
Engineering at the Research School of Physics and Engineering, The
Australian National University. He received his B.E. (Hons) in Electrical
Engineering from the University of Melbourne in 1992, after which he worked
with Osram in Malaysia as a quality assurance engineer. In 1997, he was
awarded the PhD degree from the Australian National University for his
dissertation on "Ion beam effects in GaAs-AlGaAs materials and devices".
His research interests include epitaxial growth of low-dimensional compound
semiconductors, nanostructured optoelectronic devices and ion-implantation
processing of compound semiconductors for optoelectronic device
applications. Prof. Tan is a Senior Member of the IEEE. |
|
