Abstract

         Two-dimensional (2D) materials such as graphene and MoS2 have attracted intense interest as alternative electronic materials in the post-silicon area. Graphene features exceptionally higher carrier mobility but is limited by its semimetal nature and cannot be used for transistors with sufficient on-off ratio. 2D semiconductors (2DSCs) such as MoS2 exhibit an intrinsic band gap and can enable transistors with high on-off ratio, but are limited by relatively low carrier mobility and poor on-current density. Despite intense interest and effort to date, it remains an open question weather 2DSC transistors can offer competitive performance matching up to exceeding that of the silicon devices. This talk will review various strategies for optimizing the factors including carrier mobility, contact resistance and channel length, and discuss how these strategies can be combined together to achieve high performance 2D transistors. In particular, A unique approach towards high-performance 2D transistors will be discussed. The current challenges and future opportunities in 2D electronics will be also concluded in this talk.