 Navigation |
|
| Characterization of nano-structure materials |
|
Because of its high compatibility with conventional microfabrication processing
technology, epitaxial graphene (EG) grown on SiC shows exceptional promise
for graphene-based electronics. However, to date, a detailed understanding of
the transformation from three-layer SiC to monolayer graphene is still lacking.
Here, we demonstrate the direct atomic-scale observation of EG growth on a
SiC (11¯00) surface at 1,000 °C by in situ transmission electron microscopy in
combination with ab initio molecular dynamics (AIMD) simulations. Our detailed
analysis of the growth dynamics of monolayer graphene reveals that three SiC
(11¯00) layers decompose successively to form one graphene layer. Sublimation
of the first layer causes the formation of carbon clusters containing short chains
and hexagonal rings, which can be considered as the nuclei for graphene
growth. Decomposition of the second layer results in the appearance of new
chains connecting to the as-formed clusters and the formation of a network
with large pores. Finally, the carbon atoms released from the third layer lead to
the disappearance of the chains and large pores in the network, resulting in a
whole graphene layer. Our study presents a clear picture of the epitaxial growth
of the monolayer graphene from SiC and provides valuable information for
future developments in SiC-derived EG technology. |
In situ atomic-scale observation of monolayer graphene growth from SiC
|
|
Publication: Kaihao Yu, Wen Zhao,Xing Wu, et al. In situ atomic-scale observation of monolayer graphene growth from SiC[J]. Nano Research,2018, 11(5): 2809–2820.
|
| 1 2 3 4 5 6 7
8
9
10
11 |
|
